A theoretical study of the defect characteristics in a GaP/InP strained-layer superlattice is presented. Based on the calculated charge states, some closely bound interstitial-antisite pairs are found to form at a distance of a bond length in a stable GaP/InP (1 x 1) structure. The defect-related states localized in the energy gap suggest that the formation mechanism of the EL2 complex in the GaAs system is unsuitable for GaP/InP multilayer structures. A slow self-diffusion procedure is proposed for both group I11 and V atoms in this superlattice. Besides the investigation of some mobile species in silicon diffusion, the kick-out reactions are suggested to be favored at higher doping concentration.Die Defektcharakteristik eines GaP/InP-Ubergitters mit verspannten Schichten wird untersucht. Aufgrund der berechneten Ladungszustande wird die Bildung stark gebundener Zwischengitter-Antigitterplatz-Paare im Abstand einer Bindungslange in der stabilen GaP/InP (1 x 1)-Struktur gefunden. Die Defektzustande in der Bandliicke geben AnlaD zur Vermutung, daIj der Bildungsmechanismus des EL2-Komplexes im GaAs-System nicht auf GaP/InP-Mehrschichtstrukturen anwendbar ist. In diesem ubergitter wird eine langsame Eigendiffusion fur Atome der Gruppen I11 und V vorgeschlagen. Fur die Diffusion von Si bei starkerer Dotierung werden vorzugsweise ,,Kick-out"-Reaktionen angenommen.
Zinc oxide nanobelts, grown by a solid–vapor phase thermal sublimation process, are stimulating extensive interest because of their semiconducting and piezoelectric properties, diverse functionalities and chemical stability. For nanomanipulation and nanomeasurement of an individual ZnO nanobelts, in situ transmission electron microscopy (TEM) technique is a unique approach. In this paper, mechanical resonance of a single ZnO nanobelt, induced by an alternative electric field, was studied by in situ TEM. Due to the rectangular cross-section of the nanobelt, two fundamental resonance modes have been observed in corresponding to two orthogonal transverse vibration directions, showing the versatile applications of nanobelts as nanocantilevers and nanoresonators. The bending modulus of the ZnO nanobelts was measured to be ~ 52 GPa and the damping time constant of the resonance in vacuum of 10–8 Torr was ~ 1.2 ms. The ZnO nanobelts are promising in potential applications as nanocantilevers, nanoresonators and nanoactuators.
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