The donor-functionalised alkoxides [Et(2)Ga(OR)](2)(R = CH(2)CH(2)NMe(2)(1), CH(CH(2)NMe(2))(2)(2), CH(2)CH(2)OMe (3), CH(CH(3))CH(2)NMe(2)(4), C(CH(3))(2)CH(2)OMe (5)) were synthesised by the 1:1 reaction of Et(3)Ga with ROH in hexane or dichloromethane at room temperature. Reaction of Et(3)Ga with excess ROH in refluxing toluene resulted in the isolation of a 1:1 mixture of [Et(2)Ga(OR)](2) and the ethylgallium bisalkoxide [EtGa(OR)(2)](R = CH(2)CH(2)NMe(2)(6) or CH(CH(3))CH(2)NMe(2)(7)). X-ray crystallography showed that compound 6 is monomeric and this complex represents the first structurally characterised monomeric gallium bisalkoxide. Homoleptic gallium trisalkoxides [Ga(OR)(3)](2) were prepared by the 1:6 reaction of [Ga(NMe(2))(3)](2) with ROH (R = CH(2)CH(2)NMe(2)(8), CH(CH(3))CH(2)NMe(2)(9), C(CH(3))(2)CH(2)OMe (10)). The decomposition of compounds 1, 4, 5 and 8 were studied by thermal gravimetric analysis. Low pressure CVD of 1 and 5 resulted in the formation of thin films of crystalline Ga(2)O(3).
Gold, reflective TiS 2 films have been produced from the single-source precursor [Ti(SBu t ) 4 ] by aerosol-assisted chemical vapour deposition on glass. Films were deposited between 150 and 300 uC using hexanes, dichloromethane or toluene solvent. The titanium sulfide films were analysed by Raman, UV-Vis spectroscopy, scanning electron microscopy (SEM), X-ray powder diffraction, energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS).
Atmospheric pressure chemical vapor deposition (APCVD) of niobium sulfide coatings was achieved on glass substrates from the reaction of NbCl 5 and S(SiMe 3 ) 2 , tBu 2 S 2 , tBuSH, or HSCH 2 CH 2 SH at 250−600°C. The niobium sulfide films grown at temperatures above 500°C were crystalline, and powder X-ray diffraction showed that two polytypes of NbS 2 were produced. The sulfur precursor used is fundamental to the polytype of NbS 2 obtained; films that are grown from the APCVD reaction of NbCl 5 and S(SiMe 3 ) 2 or tBu 2 S 2 at 500−600°C crystallize into the 1T structure, whereas those grown from the APCVD reaction of NbCl 5 and tBuSH or
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