We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (P(O2)<10(-5) mbar) and has a three-dimensional character. However, at higher P(O2) the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low P(O2), other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.

We have in detail characterized the anisotropic charge response of the dimer Mott insulator κ-(BEDT-TTF)2Cu2(CN)3 by dc conductivity, Hall effect and dielectric spectroscopy. At room temperature the Hall coefficient is positive and close to the value expected from stoichiometry; the temperature behavior follows the dc resistivity ρ(T ). Within the planes the dc conductivity is well described by variable-range hopping in two dimensions; this model, however, fails for the out-ofplane direction. An unusually broad in-plane dielectric relaxation is detected below about 60 K; it slows down much faster than the dc conductivity following an Arrhenius law. At around 17 K we can identify a pronounced dielectric anomaly concomitantly with anomalous features in the mean relaxation time and spectral broadening. The out-of-plane relaxation, on the other hand, shows a much weaker dielectric anomaly; it closely follows the temperature behavior of the respective dc resistivity. At lower temperatures, the dielectric constant becomes smaller both within and perpendicular to the planes; also the relaxation levels off. The observed behavior bears features of relaxor-like ferroelectricity. Because heterogeneities impede its long-range development, only a weak tunneling-like dynamics persists at low temperatures. We suggest that the random potential and domain structure gradually emerge due to the coupling to the anion network.

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La, Sr)TiO(3-delta) (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.

We present results of comprehensive study of electronic properties of (TiZrNbCu) 1−x Ni x metallic glasses performed in broad composition range x encompassing both, high entropy (HE) range, and conventional Ni-base alloy concentration range, x ≥ 0.35. The electronic structure studied by photoemission spectroscopy and low temperature specific heat (LTSH) reveal a split-band structure of density of states inside valence band with d-electrons of Ti, Zr, Nb and also Ni present at Fermi level N (E F ), whereas LTSH and magnetoresistivity results show that variation of N (E F ) with x changes in Ni-base regime. The variation of superconducting transition temperatures with x closely follows that of N (E F ). The electrical resistivities of all alloys are high and decreasewith increasing temperature over most of explored temperature range, and their temperature dependence seems dominated by weak localization effects over a broad temperature range (10 − 300 K). The preliminary study of Hall

The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode J. Appl. Phys. 112, 064116 (2012) Pulsed laser ablation of complex oxides: The role of congruent ablation and preferential scattering for the film stoichiometry Appl. Phys. Lett. 101, 131601 (2012) Applications of pulsed laser ablation for enhanced gold nanofluids J. Appl. Phys. 112, 063113 (2012) Growth processes of lithium titanate thin films deposited by using pulsed laser deposition