“…Ever since the reports on theoretical material design for high T C DMS's [3,4], the discovery of room-temperature ferromagnetism in DMS's based on wide-band gap or oxide semiconductors has been reported [5,6] although the origin of the ferromagnetism has not been clarified yet. Meanwhile, various attempts of other approaches to higher T C have been made: These include nanostructure designing such as digital ferromagnetic heterostructures [7,8] and nanoparticles [9,10]; employment of new host materials such as, e.g., layered compound Sb 2 Te 3 [11], correlated metal (La,Sr)TiO 3 [12], and rare-earth oxide CeO 2 [13] instead of conventional semiconductors.…”