Collective electron transport causes a weakly coupled semiconductor superlattice under dc voltage bias to be an excitable system with 2N+2 degrees of freedom: electron densities and fields at N superlattice periods plus the total current and the field at the injector. External noise of sufficient amplitude induces regular current self-oscillations (coherence resonance) in states that are stationary in the absence of noise. Numerical simulations show that these oscillations are due to the repeated nucleation and motion of charge dipole waves that form at the emitter when the current falls below a critical value. At the critical current, the well-to-well tunneling current intersects the contact load line. We have determined the device-dependent critical current for the coherence resonance from experiments and numerical simulations. We have also described through numerical simulations how a coherence resonance triggers a stochastic resonance when its oscillation mode becomes locked to a weak ac external voltage signal. Our results agree with the experimental observations.

Weakly coupled semiconductor superlattices under dc voltage bias are excitable systems with many degrees of freedom that may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices. Superlattices with identical periods exhibit current self-oscillations due to the dynamics of charge dipole waves but chaotic oscillations exist on narrow voltage intervals. They disappear easily due to variation in structural growth parameters. Based on numerical simulations, we predict that inserting two identical sufficiently separated wider wells increases superlattice excitability by allowing wave nucleation at the modified wells and more complex dynamics. This system exhibits hyperchaos and varieties of intermittent chaos in extended dc voltage ranges. Unlike in ideal superlattices, our chaotic attractors are robust and resilient against noises and against controlled random disorder due to growth fluctuations.

We study a granular gas of viscoelastic particles, i.e, the kinetic energy loss upon collision, characteristic of granular materials, is a function of the particles relative velocities at impact. In order to characterize thermal memory in this system, we study the temperature relaxation curves when the granular gas is subject to sudden thermostat changes (the gas is heated homogeneously by means of a white noise). Results show that the system may display anomalous cooling and heating velocities at early times. In particular, a significant Mpemba effect is present; i.e., an initially hotter/cooler granular gas can cool down/heat up faster than an in comparison cooler/hotter granular gas. Moreover, a non-monotonic relaxation of the granular temperature can also be observed (also known as Kovacs effect) when the granular gas undergoes a certain protocol that sets it at a temperature equal to its long-time value. We study our system via three independent methods: theoretical solution, molecular dynamics simulations and exact numerical solution of the kinetic equation (obtained by means of the Direct Monte Carlo simulation method). We find a good agreement between all three methods.

Cooling and heating faster a system is a crucial problem in science, technology and industry. Indeed, choosing the best thermal protocol to reach a desired temperature or energy is not a trivial task. Noticeably, we find that the phase transitions may speed up thermalization in systems where there are no conserved quantities. In particular, we show that the slow growth of magnetic domains shortens the overall time that the system takes to reach a final desired state. To prove that statement, we use intensive numerical simulations of a prototypical many-body system, namely the 2D Ising model.

Weakly coupled semiconductor superlattices under DC voltage bias are nonlinear systems with many degrees of freedom whose nonlinearity is due to sequential tunneling of electrons. They may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices. Here we present a general sequential transport model with different voltage drops at quantum wells and barriers that includes noise and fluctuations due to the superlattice epitaxial growth. Excitability and oscillations of the current in superlattices with identical periods are due to nucleation and motion of charge dipole waves that form at the emitter contact when the current drops below a critical value. Insertion of wider wells increases superlattice excitability by allowing wave nucleation at the modified wells and more complex dynamics. Then hyperchaos and different types of intermittent chaos are possible on extended DC voltage ranges. Intrinsic shot and thermal noises and external noises produce minor effects on chaotic attractors. However, random disorder due to growth fluctuations may suppress any regular or chaotic current oscillations. Numerical simulations show that more than 70% of samples remain chaotic when the standard deviation of their fluctuations due to epitaxial growth is below 0.024 nm (10% of a single monolayer) whereas for 0.015 nm disorder suppresses chaos.