In this paper, we report a study on an alternative One Time Programmable (OTP) memory cell consisting in an access MOSFET and a capacitor integrated between the contact plug and the first metal line level. Such an OTP should result in a denser cell as compared to the standard polyfuse or antifuse OTPs.The results obtained on these integrated capacitors show good overall electrical performance with breakdown voltage adjustable under 5V and large sense current margins (about 6 decades). The dispersion, even if quite large in this initial study, proved to be manageable since the capacitor's acceleration factors are high.
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