The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a nonvolatile memory. In this review we shall summarise the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilised and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.

In laboratory experiments we demonstrate that protoplasmic tubes of acellular slime mould Physarum polycephalum show current versus voltage profiles consistent with memristive systems and that the effect is due to the living protoplasm of the mould. This complements previous findings on memristive properties of other living systems (human skin and blood) and contributes to development of self-growing bio-electronic circuits. Distinctive asymmetric V -I curves which were occasionally observed when the internal current is on the same order as the driven current, are well-modelled by the concept of active memristors.

This article presents a spiking neuroevolutionary system which implements memristors as plastic connections, i.e. whose weights can vary during a trial. The evolutionary design process exploits parameter self-adaptation and variable topologies, allowing the number of neurons, connection weights, and inter-neural connectivity pattern to emerge. By comparing two phenomenological real-world memristor implementations with networks comprised of (i) linear resistors (ii) constant-valued connections, we demonstrate that this approach allows the evolution of networks of appropriate complexity to emerge whilst exploiting the memristive properties of the connections to reduce learning time. We extend this approach to allow for heterogeneous mixtures of memristors within the networks; our approach provides an in-depth analysis of network structure. Our networks are evaluated on simulated robotic navigation tasks; results demonstrate that memristive plasticity enables higher performance than constant-weighted connections in both static and dynamic reward scenarios, and that mixtures of memristive elements provide performance advantages when compared to homogeneous memristive networks.

Flexible solution processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for both electrodes increases the richness of behaviour allowing both curved and triangular memristive switching resistance memories. A comparison device with an aluminium bottom electrode and gold top electrode only exhibited significant memristive resistance switching when the aluminium electrode was the cathode, suggesting that the electrode is acting as a source/sink of oxygen anions. When the gold electrode was the cathode this electrode was deformed by oxygen evolution. These results demonstrate that aluminium is helpful for stabilising and promoting memristive behaviour in sol-gel TiO2 devices and that changing electrodes from aluminium to gold creates fundamentally different device characteristics.