Cesium iodide (CsI) is a well-established scintillator material that also serves as a precursor for all-inorganic halide perovskite solar absorbers, such as CsPbI 3 . However, the lack of conformal and scalable methods to deposit halide perovskite thin films remains a major challenge on their way to commercialization. In this work, we employ atomic layer deposition (ALD) as the key method due to its inherent scalability to large areas and complex-shaped surfaces. We demonstrate two new ALD processes for the deposition of CsI and CsPbI 3 thin films. The CsI process relies on cesium bis(trimethylsilyl) amide (Cs(btsa)) and tin(IV) iodide (SnI 4 ) as precursors and yields high-purity, uniform, and phase-pure thin films. This process works in a wide temperature range (140−350 °C) and exhibits a large growth per cycle value (GPC) of 3.3 Å (85% of a CsI monolayer). Furthermore, we convert CsI into CsPbI 3 perovskite by exposing a CsI film to our earlier PbI 2 ALD process. We demonstrate the deposition of phase-pure γor δ-CsPbI 3 perovskite thin films, depending on the applied deposition temperature and number of PbI 2 cycles. We believe that the ALD-based approach described in this work will offer a viable alternative for depositing perovskite thin films in applications that involve complex high aspect ratio structures or large substrate areas.

Lithium containing multicomponent oxides are important materials for both lithium-ion batteries and optical applications. In most cases thin films of these materials are desired. Atomic layer deposition (ALD) is a thin film deposition method that is known to deposit high quality films by sequential self-limiting surface reactions. However, the reactivity of lithium ions during the deposition process can pose challenges for the control of the film growth and even destroy the selflimiting nature of ALD completely. In this paper, we have studied the combination of atomic layer deposition and solid state reactions for the generation of lithium containing multicomponent oxide films. Atomic layer deposited transition metal oxide thin films were covered with ALD-grown lithium carbonate, and the films were annealed to produce lithium tantalate, titanate, and niobate. Lithium carbonate was chosen as the source of lithium because it is easy to deposit by ALD and can be handled in air. The films were analyzed as-deposited and after annealing using grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), and time-of-flight elastic recoil detection analysis (ToF-ERDA). By this method we were able to produce crystalline and very close to stoichiometric films of LiTaO 3 , Li 2 TiO 3 , and LiNbO 3 . The films showed only small amounts of carbon and hydrogen impurities after annealing. After prolonged annealing at high temperatures, lithium silicates began to form as a result of lithium ions reacting with the silicon substrates.

A homogeneous catalytic system consisting of Mn(ii) acetate, tert-butylhydroperoxide, acetonitrile and trifluoroacetic acid oxidises various alcohols efficiently and selectively.

Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. The number of atomic layer deposition (ALD) processes for lanthanide fluorides has remained low, however. In this work, we present an ALD process for TbF3 using tris(2,2,6,6-tetramethyl-3,5-heptanedionato)terbium (Tb(thd)3) and TiF4 as precursors.The films were grown at 175-350 °C. The process yields weakly crystalline films at the lowest deposition temperature, whereas strongly crystalline, orthorhombic TbF3 films are obtained at higher temperatures. The films deposited at 275-350 °C are exceptionally pure, with low contents of C, O, and H, and the content of titanium is below the detection limit (<0.1 at-%) of time-of-flight elastic recoil detection analysis (ToF-ERDA). Due to the lack of titanium impurities, the films show high transmittance down to short UV wavelengths.

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