The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. This result possibly shows that there is still a fundamental open question concerning the double resonance process in graphene systems. 63.20.kd, 63.22.Rc, 73.22.Pr In recent years, the physics of monolayer graphene has been thoroughly investigated, unveiling a wealth of interesting and unusual properties, most of which are related to graphene's distinct electronic properties, that consist of a linear and isotropic dispersion of the electronic states around the Fermi level (E F ) near the K point in the Brillouin zone (BZ). Bilayer graphene is also a very interesting material. While in the unbiased bilayer the valence and conduction bands touch each other at the Fermi level, a gap can be opened and tuned, for example, by the application of an external electric field [1-6], which makes this a promising system for the fabrication of nanoelectronic devices. The development of bilayergraphene-based bulk devices depends on the detailed understanding of its electronic properties. Since the unit cell of AB stacked bilayer graphene is the same as that of graphite, one can model the bilayer electronic structure using a tight-binding (TB) model for graphite [7], by adapting the Slonczewski-Weiss-McClure (SWM) parameterization [8, 9] of relevant couplings. There are several theoretical [10][11][12] and experimental [3,[13][14][15][16][17]] studies of theses SWM parameters, but the agreement between the reported values, obtained with different experimental techniques, is not entirely satisfactory.In previous resonance Raman studies of bilayer graphene [15,16] in our group, the dispersion of the G ′ Raman band (also called 2D band) as a function of the laser energy was measured, and the nearest-neighbor hopping parameters γ 0 , γ 1 , γ 3 and γ 4 (shown in Fig. 1 t'FIG. 1: The intra-(γ0 and t ′ ) and inter-layer (γ1, γ3 and γ4) tight-binding parameters in bilayer graphene.were determined. In Ref.16, the fitting included also the in-plane second-neighbor hopping parameter t ′ , which is expected to be of the same order as the out-of-plane nearest-neighbor parameters. The parameter ∆, which represents the difference between the on-site energies of the sublattices A and B, was also taken into account.Group theory analysis for bilayer graphene predicts four distinct DR processes (P 11 , P 22 , P 12 , and P 21 ) along the ΓKM direction, which are illustrated in Fig. 2. The triangularly-shaped isoelectronic curves around the K and K ′ points in Figs. 2(c) and 2(f) are the equi...