Amorphous thin films of Se 80 Te (20-X) Sb X (X = 0, 4, 8, and 10 at. %) were deposited onto clean quartz substrates by vapour deposition (thermal evaporation) under a vacuum of 10 −5 Torr. The transmission spectra at normal incidence in the spectral range of 250-2500 nm were measured at room temperature. The optical energy gap E g was found to be indirect. The value of E g was found to decrease from 1.69 to 1.43 eV with increasing Sb content. The composition dependence of the optical energy gap is discussed in terms of the chemical bond approach. The band tail width of localized states E e was found to increase from 0.0297 to 0.0551 eV with increasing Sb content. PACS Nos.: 81.15.-z, 78.20.-e, 77.84.Bw.Résumé : Nous déposons des films minces de Se 80 Te (20-X) Sb X (X = 0, 4, 8 et 10 at. %) sur des substrats de quartz et déposés par phase vapeur (évaporation thermique) sous un vide de 10 -5 Torr. Nous mesurons à la température de la pièce le spectre de transmission dans le domaine spectral de 250 à 2500 nm. Nous trouvons que la bande interdite est indirecte et que sa valeur, E g , décroît de 1.69 à 1.43 eV lorsque la concentration de Sb augmente. Nous analysons la dépendance sur la concentration de la bande interdite en utilisant l'approche par liaison chimique. Nous observons que la largeur de la queue de bande des états localisés E e augmente de 0.0297 à 0.0551 lorsque la concentration de Sb croît. [Traduit par la Rédaction]
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