The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 C/cm 2 and a high coercive field of about 1MV/cm was observed. Doping of HfO2 by different dopants with a crystal radius ranging from 54pm (Si) to 132pm (Sr) was evaluated. In all cases, an improved polarization-voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling. ©2014 The Japan Society of Applied Physics

With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM

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