The electron mobility and the surface carrier density in the channel layer of a C-face 4H-SiC MOSFET was studied using a Hall measurement and a split C-V measurement. Total surface carrier density and the effective mobility were extracted experimentally using the split C-V measurement. It was found that the difference of the peak Hall mobility and the peak effective mobility was less than 20%. And the total trap density was the order of the 1012cm-2. The cause of the relatively small difference between the Hall mobility and the effective mobility was discussed.
InAs was grown on a strained InGaAs/GaAs(001) layer by molecular beam epitaxy. The critical thickness and the dot structure of the InAs were investigated as a function of the thickness of the InGaAs base layer. The critical thickness of the InAs layer increased with decreasing residual strain of the InGaAs surface. Chains of self-formed InAs dots were partially observed along the [110] direction. This selective self-formation of InAs dots was caused by a strain distribution and an anisotropy of the residual strain on the InGaAs surface.
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