The effect of heavy boron doping on oxygen precipitation in Czochralski silicon substrates of epitaxial wafers has been studied with transmission electron microscopy observations and a preferential etching method. Prolonged isothermal annealing between 700 and 1000ЊC for up to 700 h was performed on p/pϩ (5-20 m⍀ cm) and p/pϪ (10 ⍀ cm) wafers. It was found that, with an increase in boron concentration, (i) the precipitate density increased, and (ii) the precipitates could nucleate at a higher temperature. The growth process of platelet precipitates was also investigated and compared with the process in polished pϪ wafers. It was confirmed that (i) precipitate growth rate in p/pϩ wafers was higher than that in pϪ wafers, and (ii) precipitate nucleation in p/pϪ wafers was delayed compared with p/pϩ wafers. The precipitate growth in p/p+ wafers was determined to be reaction-limited, which differed from the diffusion-limited growth in pϪ wafers.
The effect of dopant-type, antimony (Sb), arsenic (As), and boron (B), on the outdiffusion of oxygen in heavily doped Czochralski (Cz) silicon wafers has been investigated using secondary ion mass spectroscopy. The results indicate that, although oxygen diffusion in Cz silicon is retarded in heavily B- and As-doped wafers during low temperature annealing (800 °C), it is not influenced by heavy Sb doping. This indicates that charge effects and atom size effects have negligible influence on the diffusion of oxygen. The B and As diffusion retardation effect is attributed to the existence of dopant-oxygen complexes. The oxygen solubility was largest in the most heavily B-doped samples annealed at low temperature.
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