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Device-quality n-type layers have been produced by ion implantation in Fe-doped semi-insulating InP. 29Si has been used as the dopant and anneals were carried out with the aid of a multiple-layered encapsulant consisting of plasma-deposited Si3N4 and pyrolytic P-doped SiO2. These layers have been used to make n-channel MESFET’s for which gains of 13.7 and 9.8 dB were measured at 8 and 10 GHz, respectively. The gate metallization for these devices was Au. Low-leakage currents and adequate gate breakdown characteristics were observed.

Coating process technology is in widespread use because the surface of most materials needs to be treated in order for the final product to meet all the functional needs and requirements. The modification is accomplished by applying a coating or series of coatings to the material to improve its performance and make it more suitable for use, or to give it different characteristics. Many of the commercially available coating applicators are described, including units for simultaneous multilayer application, for discrete coating, and for patch coating. While convection drying is emphasized, brief descriptions of conduction and infrared heating, as well as of UV and electron‐beam curing, are given.