The first high data-capacity routing in a 3-stage switch using integrated 4×4 QW-SOA circuits is reported. The feasibility of a proof-of-principle 16×16 routing switch is demonstrated for 8λ×10Gb/s operation, with an IPDR of 6dB.
1.3µm QD SOAs are shown to provide 19dB optical gain at temperatures up to 70°C, allowing <0.1dB system penalty at 10Gb/s. The gain is constant to within ±3.5dB from 20°C-70°C for 10nm spectral bandwidth. OCIS codes: (230.4480) Optical amplifiers; (250.5980) Semiconductor optical amplifiers
IntroductionUsing the Stranski-Krastanov (SK) growth technique, quantum dots have been shown to have excellent potential for applications in optical amplification [1]. As a result of their special characteristics, QD semiconductor optical amplifiers (SOAs) have been shown to provide broadband amplification with low distortion, high saturated output power, and low noise figures [1].These merits make QD material systems a promising candidate for a wide range of many transmission applications, such as power boosters, in-line repeaters [2], optical cross connects [3] and optical add/drop multiplexers. However, with the continuing development of high speed data communications, there is renewed interest in producing compact devices which also operate in uncooled circumstances, where operating temperatures as high as 70°C are encountered. As a result, in recent years, there has been interest in developing semiconductor and erbium fibre amplifiers which can operate uncooled over a large temperature range. Quantum dots, with their enhanced carrier confinement properties, have for some time been believed to have enhanced performance at high temperature, and hence in this paper, we report the first demonstration of optical amplification in semiconductor optical amplifiers over wide temperature ranges up to 70°C. In addition to the static measurements of the gain characteristics of the devices, initial dynamic systems measurements are reported.
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