In this paper the breakdown field strength and resistivity of sputter‐deposited Al2O3, SiO2 and Si3N4 layers are investigated in the temperature range between room temperature and 400 °C. All the investigated layers showed excellent insulation properties, even at elevated sample temperature. One example of industrial application is the deposition of electrical insulation layers onto the membranes of pressure sensors using cluster type sputter equipment

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Results of Raman studies of BiLiF, and YLiF, single crystals at 300, 77, and 4.2 K and powder pellets of these materials at 300 K are reported. The observed vibrations are assigned to the irreducible representations of the space group of the crystals. Es werden Ergebnisse von Rarnanuntersuchungen an BiLiF,-und YLiF,-Einkristallen bei 300, 77 und 4,2 K und an PulverpreBlingen dieser Materialien bei 300 K mitgeteilt. Die beobachteten Schwingnngen werden irreduziblen Darstellungen der Raumgruppe dieser Kristalle zngeordnet.1) Heinrich-Buff-Ring 16, D-6300 GieBen, FRG. 2) Part I of Thesis (D26).

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