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High pressure melting curve of tin measured using an internal resistive heating technique to 45GPaThermal conductivity measurements of 6H SiC crystals were done in the 300-500 K range by means of radiation thermometry. Both p -and n -type crystals with carrier concentrations in the 8 X 10 15 to 10 20 cm -3 range were used. For the purest samples it was found that the thermal conductivity normal to the c axis is proportional to T-149, the room-temperature value being 3.87 WI cm deg. It was also found that the thermal conductivity parallel to the c axis is about 30% lower than that normal to the c axis. Electrical data in the 100-1000 K range are also presented.

The saturated electron drift velocity has been measured in epitaxial 6H silicon carbide layers. The saturation occurs at an electric field of approximately 2×105 V/cm. The saturated drift velocity is 2×107 cm/s at room temperature, i.e., a factor of 2 higher than in silicon.

One point commonly overlooked is the question of how to define current density. The phosphor crystallites are exposed to an instantaneous current density given by (assuming a "pill-box" current distribution)

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