Articles you may be interested inPhotoluminescence from silicon nanocrystals embedded in silicon nitride fabricated by low-pressure chemical vapor deposition followed by high-temperature annealing J. Appl. Phys. 117, 063105 (2015); 10.1063/1.4907762 Photoluminescence of as-grown and thermal annealed SiO x / Si -nanocrystals heterolayers grown by reactive rf sputtering J. Appl. Phys. 108, 094323 (2010); 10.1063/1.3506424 Resonant structures based on amorphous silicon suboxide doped with Er 3 + with silicon nanoclusters for an efficient emission at 1550 nm The 1.54 -μ m photoluminescence from an (Er, Ge) co-doped Si O 2 film deposited on Si by rf magnetron sputtering Appl.
SiO x / Si -nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO2 layers and affect the Si NCs layer giving place to SiOx/Si NCs (1.64<x<2) interfaces. All as-grown samples showed strong photoluminescence (PL) bands in the visible and near-infrared regions; transmission electron microscopy measurements confirmed the presence of Si NCs. Thermal annealing at 1100 °C promoted the SiO2 stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.
We report the effects of varying the oxygen partial pressure (OPP) on the structural and electronic properties of SiO x /Si heterolayers grown by RF reactive sputtering. The produced samples present silicon poly-crystalline characteristics for low values of OPP. The crystallinity decreases as the OPP increases due to oxygen interdiffusion until the silicon crystal structure becomes amorphous. The results of infrared and Raman spectroscopies show higher deviation from stoichiometry and an increment of structural disorder for samples grown with higher values of OPP. Room temperature photoluminescence (PL) is present in all as-grown samples. The PL spectra show two bands, around 1.87 and 2.16 eV, for all the samples, while a third broad band at lower energy shows up and shifts to the red as OPP increases. Our results indicate that silicon-related room temperature PL emission is correlated with the stoichiometry of the SiO x and to the formation of silicon crystals embedded in a silicon dioxide matrix.
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