Dielectric cavities support record low mode volumes by incorporating subwavelength features into photonic crystal unit cells.

A new method for high-resolution imaging, near-field scanning optical microscopy (NSOM), has been developed. The concepts governing this method are discussed, and the technical challenges encountered in constructing a working NSOM instrument are described. Two distinct methods are presented for the fabrication of well-characterized, highly reproducible, subwavelength apertures. A sample one-dimensional scan is provided and compared to the scanning electron micrograph of a test pattern. From this comparison, a resolution of > 1,500 A (i.e., approximately lambda/3.6) is determined, which represents a significant step towards our eventual goal of 500 A resolution. Fluorescence has been observed through apertures smaller than 600 A and signal-to-noise calculations show that fluorescent imaging should be feasible. The application of such imaging is then discussed in reference to specific biological problems. The NSOM method employs nonionizing visible radiation and can be used in air or aqueous environments for nondestructive visualization of functioning biological systems with a resolution comparable to that of scanning electron microscopy.

We introduce a method to fabricate solid-state nanopores with sub-20 nm diameter in membranes with embedded metal electrodes across a 200 mm wafer using CMOS compatible semiconductor processes. Multi-layer (metal-dielectric) structures embedded in membranes were demonstrated to have high uniformity (± 0.5 nm) across the wafer. Arrays of nanopores were fabricated with an average size of 18 ± 2 nm in diameter using a Reactive Ion Etching (RIE) method in lieu of TEM drilling. Shorts between the membrane-embedded metals were occasionally created after pore formation, but the RIE based pores had a much better yield (99%) of unshorted electrodes compared to TEM drilled pores (<10%). A double-stranded DNA of length 1 kbp was translocated through the multi-layer structure RIE-based nanopore demonstrating that the pores were open. The ionic current through the pore can be modulated with a gain of 3 using embedded electrodes functioning as a gate in 0.1 mM KCl aqueous solution. This fabrication approach can potentially pave the way to manufacturable nanopore arrays with the ability to electrically control the movement of single or double-stranded DNA inside the pore with embedded electrodes.

Silicon nanowire field effect transistor (FET) sensors have demonstrated their ability for rapid and label-free detection of proteins, nucleotide sequences, and viruses at ultralow concentrations with the potential to be a transformative diagnostic technology. Their nanoscale size gives them their ultralow detection ability but also makes their fabrication challenging with large sensor-to-sensor variations, thus limiting their commercial applications. In this work, a combined approach of nanofabrication, device simulation, materials, and electrical characterization is applied toward identifying and improving fabrication steps that induce sensor-to-sensor variations. An enhanced complementary metal-oxide-semiconductor-compatible process for fabricating silicon nanowire FET sensors on 8 in. silicon-on-insulator wafers is demonstrated. The fabricated nanowire (30 nm width) FETs with solution gates have a Nernst limit subthreshold swing (SS) of 60 ± 1 mV/decade with ∼1.7% variations, whereas literature values for SS are ≥80 mV/decade with larger (>10 times) variations. Also, their threshold voltage variations are significantly (∼3 times) reduced, compared to literature values. Furthermore, these improved FETs have significantly reduced drain current hysteresis (∼0.6 mV) and enhanced on-current to off-current ratios (∼10). These improvements resulted in nanowire FET sensors with the lowest (∼3%) reported sensor-to-sensor variations, compared to literature studies. Also, these improved nanowire sensors have the highest reported sensitivity and enhanced signal-to-noise ratio with the lowest reported defect density of 2.1 × 10 eV cm, in comparison to literature data. In summary, this work brings the nanowire sensor technology a step closer to commercial products for early diagnosis and monitoring of diseases.