188SAITO, BOZKURT, AND MURA tion is for the distributed dislocations in the square domains rather than discrete dislocations. Our method of analysis also has an advantage to observe the stress distributions inside of the dislocation core if the square domain is assumed as the core of the dislocation. Figure 5 shows the variation of the maximum value of 0'33 along the thickness of the film for several values of a/I. This indicates the stress relaxation caused by the presence of the free surface.For the contrast study of dislocation images by electron microscopy, as Yoffe 9 pointed out, the quantity it j = LAA uj(x 1 , X a , x 3 ) exp(21Tjk~3) dx 3 is important rather than the displacement itself. The quantity can easily be obtained from (9) and (12). A semiempirical model has been developed for the frequency dependence of the photoconductive response of high-resistivity extrinsic Ge samples operating at cryogenic temperatures. The model predicts that the photoconductive gain saturates to the sweepout-limited value of ~ for frequencies greater than G(O)/1T'T p , where G(O) is the dc photoconductive gain and 'Tp=HOP is the dielectric relaxation time. Measurements of signal as a function of modulation frequency and background for a large Ge : Hg sample at liquid neon (-28 OK) show good agreement with the model.
The development and evaluation of a germanium imaging sensor is described. The sensor, comprised of an electronbeam-scanned photodiode array,was designed for air-glow operation. Surface-barrier photodiode arrays were developed for optimized imaging, and their processing provided a powerful technique for preserving the characteristic properties of high-resistivity germanium by limiting the maximum processing temperature to 54o"C. Photodiode-array processing was developed to a high degree of sophistication, but for satisfactory imaging using airglow illumination, additional development is required to improve the electronbeam characteristics of the tube, array cooling, and video amplifier. The best sensor had a quantum efficiency of~67.4 percent at 1.55 pm and 90"K for an absolute sensitivity of 0.84 A/W.
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