Fundamental equilibrium considerations derived from the
normalSi/H2O/O2/SiO2
system have been successfully employed in the design and operation of a novel low temperature epitaxial silicon process. Films have been deposited in the range
750°
Device grade ultrashallow p+ junctions have been fabricated by a novel ion implantation scheme. The novelty of the method is in using antimony to amorphize silicon prior to a low-energy boron implantation. Antimony satisfies a combination of two requirements lacking from all previously applied preamorphization schemes. First, due to the heavy mass of antimony, amorphization of silicon is achieved with a minimal amount of implantation damage. Second, and most important, antimony is a dopant of an opposite type than boron. Because of this, the inevitable implant tail of the preamorphizing species serves to confine the depth of the p layer. The optimized conditions for the application of this scheme have been determined. Junctions below 100 nm in depth, with less than 200 Ω/⧠ sheet resistance and junction leakage of 10 nA/cm2, have been achieved. The electrical results have been correlated with the residual defect structure observed by cross-sectional transmission electron microscopy.
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