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Room-temperature irradiation of silicon with 2 MeV electrons can create many defects that give rise to optical absorption lines. This paper describes a simple procedure for calculating the strengths of the more important absorption features and the concentrations of the corresponding defect centres as functions of the radiation dose and of the carbon and oxygen concentrations in the silicon. The following absorption features and centres are considered: the 969 meV line (twocarbon-atom centre), the 865 cm" line (C + O centre), the 1 0 2 0 cm" line (C + 0 + self-interstitial), the 835 cm" line (vacancy + 0 'A centre'), the 1.7 p m band (di-vacancy) and the 488 meV line (C + 0 +vacancy centre).