No abstract

No abstract

No abstract

Pure and lanthanum modified BFO ͑La x Bi 1−x FeO 3 , x = 0.0, 0.08, 0.15, 0.30͒ thin films were fabricated on Pt͑111͒ / Ti/ SiO 2 / Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.

No abstract