Picosecond photoconductivity in iron-and oxygen-doped InP has been measured using an original experimental arrangement. It is supposed that the carrier recombination in this material is caused by trapping at t h e donoracceptor complexes.
A tandem photoconductive switch, producing nearly rectangular electrical pulses with variable duration from 25 ps to 1 ns, was used for accurate turn-on delay measurements of a laser diode. Maximum electrical pulse amplitude was 75 V and both rise and fall times were 15 ps. The shortest delay recorded was 60 ps. The carrier lifetime at the lasing threshold was found to be 3.89 ns.
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