SUMMARYVarious sources of distortion in class A junction transistor amplifier stages are investigated using a unified method of analysis. Expressions for simultaneous cancellation of second and third harmonic distortions at low frequencies are derived giving the design relations between the source and load resistances together with the transistor operating parameters. High frequency effects are considered and a simple compensating method is devised to extend the gain-bandwidth product to the order of (;nCTcrvb).
A modified MOST physical structure that gives higher current and higher transconductance for the same VT is suggested. For an n-channel MOST, the suggested structure uses a floating buried n+ layer below the gate area at a distance approximately equal to the maximum depletion layer width below the silicon-oxide interface. Computer simulation using PISCES-W had been used to characterize the suggested structure. Results obtained verified the anticipated transconductance.
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