We report here a concept for utilization of the "coffee ring effect" and inkjet printing to obtain transparent conductive patterns, which can replace the widely used transparent conductive oxides, such as ITO. The transparent conductive coating is achieved by forming a 2-D array of interconnected metallic rings. The rim of the individual rings is less than 10 microm in width and less than 300 nm in height, surrounding a "hole" with a diameter of about 150 microm; therefore the whole array of the interconnected rings is almost invisible to the naked eye. The rims of the rings are composed of self-assembled, closely packed silver nanoparticles, which make the individual rings and the resulting array electrically conductive. The resulting arrays of rings have a transparency of 95%; resistivity of 0.5 cm(2) was 4 +/- 0.5 Omega/, which is better than conventional ITO transparent thin films. The silver rings and arrays are fabricated by a very simple, low cost process, based on inkjet printing of a dispersion of 0.5 wt % silver nanoparticles (approximately 20 nm diameter) on plastic substrates. The performance of this transparent conductive coating was demonstrated by using it as an electrode for a plastic electroluminescent device, demonstrating the applicability of this concept in plastics electronics. It is expected that such transparent conductive coatings can be used in a wide range of applications such as displays (LCD, plasma, touch screens, e-paper), lighting devices (electroluminescence, OLED), and solar cells.
Classical percolation theory is concerned with the onset of geometrical connectivity and the accompanied onset of electrical connectivity in disordered systems. It was found, however, that in many systems, such as various composites, the geometrical and electrical onsets of the connectivity are not simultaneous and the correlation between them depends on physical processes such as tunneling. The difference between the above two types of systems and the consequences for the electrical transport properties of the latter composites have been largely ignored in the past. The application of scanning local probe microscopies and some recent theoretical developments have enabled a better understanding of the latter systems and their sometimes "strange" behavior as bona fide percolation systems. In this review we consider the above issues and their manifestation in three types of systems: Carbon Black–Polymer composites, metal–insulator cermets and hydrogenated microcrystalline silicon.
In many composites the electrical transport takes place only by tunneling between isolated particles. For a long time it was quite a puzzle how, in spite of the incompatibility of tunneling and percolation networks, these composites conform well to percolation theory. We found, by conductance atomic force microscopy measurements on granular metals, that it is the apparent cut-off of the tunneling to non-nearest neighbors that brings about this behavior. In particular, the percolation cluster is shown to consist of the nearest-neighbors sub-network of the full tunneling network. (grains, crystallites, etc.). In the pioneering works on such systems, these two mechanisms have been considered separately. 1,2,3,4,5,6 In particular, for a high enough content of the metallic phase in granular metals, the continuous network is formed by the
Obtaining insight into, and ultimately control over, electronic doping of halide perovskites may improve tuning of their remarkable optoelectronic properties, reflected in what appear to be low defect densities and as expressed in various charge transport and optical parameters. Doping is important for charge transport because it determines the electrical field within the semiconducting photoabsorber, which strongly affects collection efficiency of photogenerated charges. Here we report on intrinsic doping of methylammonium lead tri-iodide, MAPbI 3 , as thin films of the types used for solar cells and LEDs, by I 2 vapor at a level that does not affect the optical absorption and leads to a small (<20 meV, ∼9 nm) red shift in the photoluminescence peak. This I 2 vapor treatment makes the films 10× more electronically conductive in the dark. We show that this change is due to p-type doping because we find their work function to increase by 150 mV with respect to the ionization energy (valence band maximum), which does not change upon I 2 exposure. The majority carrier (hole) diffusion length increases upon doping, making the material less ambipolar. Our results are well-explained by I 2 exposure decreasing the density of donor defects, likely iodide vacancies (V I ) or defect complexes, containing V I . Invoking iodide interstitials, which are acceptor defects, seems less likely based on calculations of the formation energies of such defects and is in agreement with a recent report on pressed pellets.
Photovoltaic solar cells operate under steady-state conditions that are established during the charge carrier excitation and recombination. However, to date no model of the steady-state recombination scenario in halide perovskites has been proposed. In this Letter we present such a model that is based on a single type of recombination center, which is deduced from our measurements of the illumination intensity dependence of the photoconductivity and the ambipolar diffusion length in those materials. The relation between the present results and those from time-resolved measurements, such as photoluminescence that are commonly reported in the literature, is discussed.
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