We studied the influences of wide energy spectrum and emission angle of secondary electrons on electron bunching from a dc-biased single surface multipactor. In our previous study of the same system, an ideally narrow energy spread of secondary electrons without emission angle was used in the analysis of the electron trajectory [M. ]. In this paper, we investigated the cases with realistic energy spectrum, which is featured by a wide energy spread and significant emission angle. To theoretically approach the matter of emission angle, we employed a concept of effective longitudinal velocity distribution. The theoretical results are verified by particle-in-cell (PIC) simulations. We also studied the electron bunching from a copper by PIC simulations, where we observed stable electron bunches with bunch width of approximately 80 lm.
Various methods to generate ultrashort electron bunches for the ultrafast science evolved from the simple configuration of two-plate vacuum diodes to advanced technologies such as nanotips or photocathodes excited by femtosecond lasers. In a diode either in vacuum or of solid-state, the transit-time limit originating from finite electron mobility has caused spatiotemporal bunch-collapse in ultrafast regime. Here, we show for the first time that abrupt exclusion of transit-phase is a more fundamental origin of the bunch-collapse than the transit-time limit. We found that by significantly extending the cathode-anode gap distance, thereby violating the transit-time limit, the conventional transit-time-related upper frequency barrier in diodes can be removed. Furthermore, we reveal how to control the velocity chirp of bunches leading to ballistic bunch-compression. Demonstration of 0.707 THz-, 46.4 femtosecond-bunches from a 50 μm-wide diode in three-dimensional particle-in-cell simulations shows a way toward simple and compact sources of ultrafast electron bunches for diverse ultrafast sciences.
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