Ultrathin oxides (UOs) and ultrathin nitrides (UNs) play a crucial role in forming lattice-mismatched semiconductor heterostructures that are fabricated by using semiconducting grafting approach. The grafting approach has shown its great potential to realize GaN-based heterojunction bipolar transistors by fulfilling the missing high-performance p-type nitrides with other p-type semiconductors. A handful of UO and UN dielectrics readily available by atomic layer deposition (ALD) satisfy the requirements of double-sided surface passivation and quantum tunneling for semiconductor grafting. Due to the states existing between the UO or UN conduction band and that of the GaN, the ALD deposited UO or UN layer can generate significant effects on the surface band-bending of GaN. Understanding the band parameters of the interface between UO or UN and c-plane Ga-face GaN can guide the selection of interfacial dielectrics for grafted GaN-based devices. In this study, we performed x-ray photoelectron spectroscopy measurements to obtain the band-bending properties on c-plane, Ga-face GaN samples coated by different ALD cycles of ultrathin-HfO2 or ultrathin AlN. The valence band spectra of GaN coated with ultrathin-ALD–Al2O3, ALD–HfO2, or PEALD–AlN/ALD–Al2O3 were further analyzed to calculate the valence and conduction band offsets between the ALD dielectrics and the Ga-face GaN under different thicknesses and post-deposition annealing conditions of the dielectrics.
To fulfill the increasing demand for radiofrequency (RF) wireless communication capacity for epidermal electronics, stretchable integrated circuits (ICs) in the gigahertz (GHz) range are desirable. Lumped RF inductors, as a key component in RFICs, typically dominate a large portion of the circuit/chip area and therefore make such inductors mechanically stretchable is critical for GHz-frequency stretchable RFICs. Most of the reported stretchable inductors operate in the MHz frequency range. The only GHz stretchable inductor shows a quality factor of about 2, limiting its potential RF applications. Here, stretchable inductors with a high quality factor of Q > 12.6 and resonance operation frequency of f res > 11.6 GHz are demonstrated by combining microspirals with stretchable structures, overcoming all of the shortcomings of previous demonstrations. Furthermore, a stretchable 1.5–2.6 GHz filter with a peak insertion loss of −2.3 dB at 1.8 GHz is developed, showing negligible performance changes under stretching or on the skin to demonstrate the utility in practical wireless applications like GSM and Bluetooth (2.45 GHz) bands. The demonstrations can facilitate multiple GHz epidermal RFICs in the future.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.