Zinc oxysulfide nanocrystals (ZnOS NCs) were synthesized by forming ZnS phase on a ZnO matrix. ZnO nanocrystals (NCs) with a diameter of 10 nm were synthesized by forced hydrolysis in an organic solvent. As-synthesized ZnO NCs aggregated with each other due to the high surface energy. As acetic acid (AA) was added into the milky suspension of the aggregated ZnO NCs, transparent solution of well dispersed ZnO NCs formed. Finally ZnOS NCs were formed by adding thioacetic acid (TAA) to the transparent solution. The effect of recrystallization on the structural, optical and electrical properties of the ZnOS NCs were studied. The results of UV-vis absorption confirmed the band gap tunability caused by increasing the curing temperature of ZnOS thin films. This may have originated from the larger effective size due to the recrystallization of zinc sulfide (ZnS). From XRD result we identified that ZnOS thin films have a zinc blende crystal structure of ZnS without wurtzite ZnO structure. This is probably due to the small amount of ZnO phases. These assertions were verified through EDS of FE-SEM, XPS and EDS mapping of HR-TEM results; we clearly proved that ZnOS were comprised of ZnS and ZnO phases.
Silicon nanocrystals (Si NCs) were synthesized by the electron beam reduction reaction (EBRR). Silicon tetrachloride (SiCl4
), isopropyl alcohol (IPA), and toluene were used as the silicon source, radical scavenger, and solvent, respectively. Three types of sample were prepared: from a solution of SiCl4
and IPA under irradiation by an electron beam (e‐beam) with energy, current, and dose of 1 MeV, 0.2 mA, and 300 kGy, respectively, and from the reactants (SiCl4
‐only or SiCl4
+ IPA) under no e‐beam irradiation. New features in the ultraviolet–visible absorption and photoluminescence spectroscopies for the case of e‐beam irradiation were attributed to the formation of the Si NCs, as confirmed by fast Fourier transform processed image in field‐emission transmission electron microscopy analysis. The possibility of the formation of the Si NCs was also validated by the Gibbs free energy calculations of the proposed reaction mechanism for EBRR of the SiCl4
precursor.
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