Infrared absorption spectroscopy proves to be a useful tool in the evaluation of plasma chemical conversions of etch gas mixtures during plasma etching for microelectronics. The partial pressures of the various perfluorinated gas components are obtained from infrared spectra with sufficient accuracy and may yield information about the actual state of the system. Methods of spectra recording and partial pressure computation are discussed. To demonstrate the applicability of the method, the conversions of CF4 + O2, and C2F4 in a glow discharge are investigated.
The X‐ray diffraction method was tested for the investigation of the structure of thin fluorocarbon films grown in a glow discharge in tetrafluoroethylene. It could be shown that the computed electron densities are strongly related to the structure of the well known linear molecule of polytetrafluoroethylene. The results are supported by infrared absorption spectra. Foreign atoms and chain branching being a reason for the amorphous structure of the films were ascertained.
On the basis of the realistic argon atom model consisting of 65 discrete effective levels numerical results for the collisional‐radiative volume recombination, ionization and decay coefficients are obtained. The computations are carried out without any approximations of integral functions. The presented comparison of theoretical and experimental results for the decay coefficient shows that the values calculated by us are in much better agreement with experimental values than those obtained by Desai and Corcoran on the assumption that the argon atom is hydrogen‐like.
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