Low resistive electrodes based on Co and Mo co-doped SnO2 were prepared by
the conventional solid-state reaction and sintered at 1250?C for 2 h.
Concentration of Co2O3 precursor was unchanged (1mol%), while MoO3 was
varied (0.25, 0.50 to 0.75mol%) to promote conductivity. The structural and
microstructural characterization revealed that the samples have a
rutile-type structure without secondary phases and large rutile grains with
low porosity. Electrical measurements on DC mode have shown a semiconductor
behaviour of the SnO2 samples doped with 0.25 and 0.75 at.% of Mo at
temperatures below 50K, indicating their suitability for low-temperature
electronic applications. Impedance measurements indicate reduced energy
barriers of less than 1meV formed between highly conductive crystallites for
the SnO2 samples doped with 0.25 and 0.75 at.% of Mo. The sample with Mo
content of 0.50 at.% presented a higher energy barrier at a few hundredths
of eV, with space charges at the crystallite boundaries.
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