Mixed cesium‐ and formamidinium‐based metal halide perovskites (MHPs) are emerging as ideal photovoltaic materials due to their promising performance and improved stability. While theoretical predictions suggest that a larger composition ratio of Cs (≈30%) aids the formation of a pure photoactive α‐phase, high photovoltaic performances can only be realized in MHPs with moderate Cs ratios. In fact, elemental mixing in a solution can result in chemical complexities with non‐equilibrium phases, causing chemical inhomogeneities localized in the MHPs that are not traceable with global device‐level measurements. Thus, the chemical origin of the complexities and understanding of their effect on stability and functionality remain elusive. Herein, through spatially resolved analyses, the fate of local chemical structures, particularly the evolution pathway of non‐equilibrium phases and the resulting local inhomogeneities in MHPs is comprehensively explored. It is shown that Cs‐rich MHPs have substantial local inhomogeneities at the initial crystallization step, which do not fully convert to the α‐phase and thereby compromise the optoelectronic performance of the materials. These fundamental observations allow the authors to draw a complete chemical landscape of MHPs including nanoscale chemical mechanisms, providing indispensable insights into the realization of a functional materials platform.
Organic–inorganic lead halide perovskite solar cells are regarded as one of the most promising technologies for the next generation of photovoltaics due to their high power conversion efficiency (PCE) and simple solution manufacturing. Among the different compositions, the formamidinium lead iodide (FAPbI3) photoactive phase has a bandgap of 1.4 eV, which enables the corresponding higher PCEs according to the Shockley–Queisser limit. However, the photoactive crystal phase of FAPbI3 is not stable at room temperature. The most high‐performing compositions to date have reduced this problem by incorporating the methylammonium (MA) cation into the FAPbI3 composition, although MA has poor stability at high temperatures and in humid environments, which can limit the lifetime of FAxMA1−xPbI3 films. CsxFA1−xPbI3 perovskites are also explored, but despite better stability they still lag in performance. Herein, the additive engineering of MA‐free organic−inorganic lead halide perovskites using divalent cations Sr2+ and Ca2+to enhance the performances of CsxFA1−xPbI3 perovskite compositions is explored. It is revealed that the addition of up to 0.5% of Sr2+ and Ca2+ leads to improvements in morphology and reduction in microstrain. The structural improvements observed correlate with improved solar cell performances at low additive concentrations.
Ultrathin, pinhole-free, and atomically smooth films are essential for future development in microelectronic devices. However, film morphology and minimum thickness are compromised when growth begins with the formation of islands on the substrate, which is the case for atomic layer deposition or chemical vapor deposition (CVD) on relatively unreactive substrates. Film morphology at the point of coalescence is a function of several microscopic factors, which lead to measurable, macroscopic rates of island nucleation and growth. To quantify the effect of these rates on the morphology at the point of coalescence, we construct two models: (1) a Monte Carlo simulation generates the film height profile from spatially random nucleation events and a constant island growth rate; simulated films resemble AFM images of the physical films; (2) an analytical model uses Poisson point statistics to determine the film thickness required to cover the last bare site on the substrate as a function of the nucleation rate and growth rate. Both models predict the same maximum thickness required to reach 99% coverage and reveal a power law relationship between the maximum thickness and the ratio of the nucleation rate divided by the growth rate. The Monte Carlo simulation further shows that the roughness scales linearly with thickness at coverages below 100%. The results match well with experimental data for the low-temperature CVD of HfB2 on Al2O3 substrates, but there are significant discrepancies on SiO2 substrates, which indicate that additional surface mechanisms must play a role.
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