We report on the formation of n-type ultra-nanocrystalline diamond exhibiting high electrical conductivity, σRT ∼104 Ω−1 m−1 by phosphorus ion implantation. The Raman study confirms the restoration of crystallinity upon high vacuum and high-temperature annealing post-implantation process at 850 °C. Varying the fluence enabled us to obtain a reduced thermal activation energy of Ea ∼8 meV with a very high carrier concentration of ne ∼1021 cm−3. Hall measurements confirm the n-type nature in phosphorus-implanted diamond at a high fluence of 1016 ions/cm2, and the nonlinear Hall effect reveals the signature of two band conduction mechanism, one via the impurity band and the other through the conduction band.
We employed the top-seeded infiltration-growth (IG) process for the fabrication of bulk (Y, Gd)Ba2Cu3Oy (YG-123) superconductors by varying the composition of (Y, Gd)2BaCuO5 (YG-211) and compared with bulk YBa2Cu3Oy (Y-123) superconductors grown under similar conditions. IG-processed YG-123 exhibited Jc (77 K) of 4.78 × 104 A cm−2 in zero field, which was higher than the value of 3.71 × 104 A cm−2 for Y-123. The superconducting transition temperature (Tc) of YG-123 increased with increasing Gd content. However, there was spatial variation in the superconducting properties of IG-processed YG-123 samples due to the inhomogeneous distribution of YG-211. Jc values of YG-123 decreased when increasing the distance from the seed both along the a and c-axis directions. The scaling studies of the pinning behavior for YG-123 showed that non-superconducting YG-211 particles act as effective pinning centers, supported by the fact that δTc type pinning is active in the system.
The paper highlights the effect of nitrogen ion implantation on polycrystalline and single crystal diamond where we try to explain its structural and electrical transport behaviour in three different ion dose regimes: low, medium and high fluence respectively.
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