Articles you may be interested inEffect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowthWe examine variations in the basic structure of quantum dot molecules ͑fourfold quantum dot nanostructures forming around a central facetted pit͒ in the Si x Ge 1−x / Si͑100͒ system. Arrays of quantum dot molecules are seeded by Ga + focused ion beam ͑FIB͒ prepatterning of the Si substrate prior to epitaxial Si buffer layer growth and Ge x Si 1−x film deposition. Five main variants to the regular quantum dot molecule structure are observed. The populations of these variant structures depend on the initial FIB processing conditions; their frequencies generally increase with increasing prepatterned pit depth and with increasing incident ion energy. This work suggests both routes to improving uniformity of regular quantum dot molecule arrays as well as routes to enabling synthesis of a wider range of nanostructure geometries.
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