High temperature luminescence-based sensing is demonstrated by embedding colloidal CdSe(ZnS) quantum dots into a high temperature SiO(2) dielectric matrix. The nanocomposite was fabricated by a solution process method. As-prepared CdSe(ZnS) quantum dots in the nanocomposite sensor show an absorption band at a wavelength of 600 nm (2.06 eV). Photoluminescence (PL) measurements show a room temperature emission peak at 606 nm (2.04 eV). The temperature-dependent emission spectra study shows for the first time a CdSe(ZnS)-SiO(2) nanocomposite-based high temperature sensor. The temperature-dependent spectral and intensity modes of the nanocomposite thin film photoluminescence were investigated from 295-525 K. The sensor shows a variation of the emission wavelength as a function of temperature with a sensitivity of ∼ 0.11 nm °C( - 1). The film morphology and roughness are characterized using AFM.
Characterization of absorption, emission, and temperature-dependent luminescent features is of significant interest for the development of optical temperature sensors and photonic devices. In this work, we conduct a comprehensive study to evaluate the orientation axis-dependent absorption and emission cross sections of Cr(3+) ions in BeAl(2)O(4). In addition, we present new data for the temperature-dependent Stark-level energies for alexandrite. Laser-induced temperature-dependent luminescence data from 300-520K on the R-line transitions are presented for application to high-temperature sensing.
Optical spectroscopy and Judd-Ofelt analysis were performed on a BaY 2 F 8 :Sm 3 crystal and used to guide the potential application of BaY 2 F 8 :Sm 3 as a laser material. Crystals were characterized by polarized absorption spectroscopy, fluorescence emission, and fluorescence lifetime measurements. The 6 H 9∕2 and 6 H 7∕2 manifolds are of most interest for visible lasers. This investigation seeks to capture the behavior of the samarium ion in a bariumyttrium-fluoride host from the UV-vis into the near-infrared wavelength regions.
Quantum dots (QDs), semiconductor nanometer sized particles have captured the attention of the scientific community. QDs have unique electrical, optical, and structural properties compared to bulk semiconductors. These properties can be harnessed for optoelectronic device applications. High fluorescent quantum yield, excellent photostability, and narrow-band photoluminescence that can be tuned from the ultraviolet to the near infrared make quantum dots attractive for opto-electronic sensor applications. One of the main factors contributing to the current interest in semiconductor QDs is the need for future miniaturization of electronic and optical devices. For many potential applications
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