The investigation of the pressure sensor chip's design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.
A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV/kPa/V) and nonlinearity (2KNL samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).
The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.
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