In this paper, we report a flexible comb electrode triboelectric–electret coupling nanogenerator using a separated friction microfiber object for self-powered position, motion direction and acceleration tracking sensing and its energy harvesting.

We report the pulsed‐laser deposition of epitaxial double‐perovskite Bi2FeCrO6 (BFCO) films on the (001)‐, (110), and (111)‐oriented single‐crystal SrTiO3 substrates. All of the BFCO films with various orientations show the 1-0.166667emtrue/21-0.166667emtrue/21-0.166667emtrue/2 and 3-0.166667emtrue/23-0.166667emtrue/23-0.166667emtrue/2 superlattice‐diffraction peaks. The intensity ratios between the 1-0.166667emtrue/21-0.166667emtrue/21-0.166667emtrue/2‐superlattice and the main 111‐diffraction peak can be tailored by simply adjusting the laser repetition rate and substrate temperature, reaching up to 4.4%. However, both optical absorption spectra and magnetic measurements evidence that the strong superlattice peaks are not correlated with the B‐site Fe3+/Cr3+ cation ordering. Instead, the epitaxial (111)‐oriented Bi2FeCrO6 films show an enhanced remanent polarization of 92 μC/cm2 at 10 K, much larger than the predicted values by density‐functional theory calculations. Positive‐up‐negative‐down (PUND) measurements with a time interval of 10 μs further support these observations. Therefore, our experimental results reveal that the strong superlattice peaks may come from A‐ or B‐site cation shifts along the pseudo‐cubic [111] direction, which further enhance the ferroelectric polarization of the BFCO thin films.

Memristor-based architectures have shown great potential for developing future computing systems beyond the era of von Neumann and Moore's law. However, the monotonous electrical input for dynamic resistance regulation limits the developments of memristors. Here, a concept of a photon-memristive system, which realizes memristance depending on number of photons (optical inputs), is proposed. A detailed theoretical derivation is performed and the memristive characteristics, as stimulated by the optical inputs based on a hybrid system, consisting of a low-dimension photoelectric semiconductor and a ferroelectric substrate are determined. The photon-memristive system is also suitable for nonvolatile photonic memory since it possesses three or more-bit data storage, desirable resistance-change space, and an ON/OFF ratio of nearly 10 7 . The integrated circuit based on several photonmemristive systems also realizes available photon-triggered in-memory computing. The photon-memristive system expands the definition of memristors and emerges as a new data storage cell for future photonic neuromorphic computational architectures.