The influence of single, double absorber layers based on perovskite solar cells has attracted considerable attention of researchers in the last few years; according to their promising output parameters such as short-circuit current (JSC), open-circuit voltage (VOC), fill factor (FF) and power conversion efficiency (PCE). The present work makes under study and investigation the comparison modelling between the two configurations of ITO/C60/MAPb(I1-xClx)3/ Spiro-OMeTAD /Au and ITO/C60/MAPb(I1-xClx)3/MASnI3/Spiro-OMeTAD /Au, the problem of lower absorption materials such as MAPb(I1-xClx)3 limits its output photovoltaic applications. Nevertheless, the need to use a prime candidate of the lead-free MASnI3 for grading with the first absorber layer that leads to absorbing a wider quantity of light spectrum, which boosting up efficiency. The simulating software of SCAPS-1D is used to examine our proposed models. The optimal output parameters (JSC, VOC, FF, and PCE) are obtained in this simulation are 27.69 mA/cm2, 1.37 V, 89.1%, and 33.66%.
A comprehensive device performance optimization of perovskite solar cells (PSCs) having the device configurations FTO/IGZO/CsSn0.5Ge0.5I3/CuO/Au, FTO/IGZO/Cs4CuSb2Cl12/CuO/Au, and FTO/IGZO/Cs3Bi2I9/CuO/Au containing the single, double, and ternary perovskites CsSn0.5Ge0.5I3, Cs4CuSb2Cl12, and Cs3Bi2I9, respectively, is done utilizing the SCAPS 1D tool. The bandgap tuning of the perovskite layers and the work function optimization of the rear‐contact metals for the chosen device designs provide an enhanced power conversion efficiency of 23.15%, 17.39%, and 9.75% for the solar cell architecture with the light‐captivating layers CsSn0.5Ge0.5I3, Cs4CuSb2Cl12, and Cs3Bi2I9, respectively. Herein, it is identified the variation of electron affinity of the perovskite layer for the aforementioned device configurations does not produce any significant enhancement in the output parameters of the simulated configurations.
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