Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (k f l~1) and degenerate semiconductor. The transport of charge carriers in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known metal-insulator transition; this transition is observed at 110 K in ITO thin films. The metalinsulator behaviour is explained by the quantum correction to the conductivity (QCC); this approach is based on the quantum-mechanical interference effects in the disordered systems. The insulating behaviour is attributed to the combined effect of the weak localization and the electron-electron interactions.
Tin sulfide (SnS), being a binary metal chalcogenide, can be a potential absorber material for the thin film photovoltaics because of its optimum direct bandgap (1.3 eV) and high absorption coefficient (>104 cm−1). In the present work, the electrical and optical properties of SnS thin film solar cells have been optimized and analyzed by Solar Cell Capacitance Simulator (SCAPS). The effect of thickness and optical band gap of SnS absorber layer on the J-V curve have been investigated to obtain better device performance. The maximum photovoltaic (PV) efficiency achieved by the PV device is 22.3 % with VOC = 756 mV, JSC = 34.9 mAcm−2 and FF = 84.4 %. The VOC value is higher than the reported values for kesterite CZTSSe absorber based solar cells. Consequently, the SnS can be a potential contender for the contemporary thin film solar cells.
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