Silicon, germanium, and related alloys, which provide the leading materials platform of electronics, are extremely inefficient light emitters because of the indirect nature of their fundamental energy bandgap. This basic materials property has so far hindered the development of group-IV photonic active devices, including diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Here we show that Ge nanomembranes (i.e., single-crystal sheets no more than a few tens of nanometers thick) can be used to overcome this materials limitation. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy bandgap relative to the indirect one. We demonstrate that mechanically stressed nanomembranes allow for the introduction of sufficient biaxial tensile strain to transform Ge into a direct-bandgap material with strongly enhanced light-emission efficiency, capable of supporting population inversion as required for providing optical gain.

Fast flexible electronics operating at radio frequencies (>1 GHz) are more attractive than traditional flexible electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for flexible electronics owing to their unique advantages. Further improvement of Si-based device speed implies significant technical and economic advantages. While the mobility of bulk Si can be enhanced using strain techniques, implementing these techniques into transferrable single-crystalline SiNMs has been challenging and not demonstrated. The past approach presents severe challenges to achieve effective doping and desired material topology. Here we demonstrate the combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs. We demonstrate a new speed record of Si-based flexible electronics without using aggressively scaled critical device dimensions.

The use of tensilely strained Ge nanomembranes as mid-infrared optical gain media is investigated. Biaxial tensile strain in Ge has the effect of lowering the direct energy bandgap relative to the fundamental indirect one, thereby increasing the internal quantum efficiency for light emission and allowing for the formation of population inversion, until at a strain of about 1.9% Ge is even converted into a direct-bandgap material. Gain calculations are presented showing that, already at strain levels of about 1.4% and above, Ge films can provide optical gain in the technologically important 2.1-2.5 μm spectral region, with transparency carrier densities that can be readily achieved under realistic pumping conditions. Mechanically stressed Ge nanomembranes capable of accommodating the required strain levels are developed and used to demonstrate strong strain-enhanced photoluminescence. A detailed analysis of the high-strain emission spectra also demonstrates that the nanomembranes can be pumped above transparency, and confirms the prediction that biaxial-strain levels in excess of only 1.4% are required to obtain significant population inversion.

The field of oxide electronics has benefited from the wide spectrum of functionalities available to the ABO3 perovskites, and researchers are now employing defect engineering in single crystalline heterostructures to tailor properties. However, bulk oxide single crystals are not conducive to many types of applications, particularly those requiring mechanical flexibility. Here, we demonstrate the realization of an all-oxide, single-crystalline nanomembrane heterostructure. With a surface-to-volume ratio of 2 × 10(7), the nanomembranes are fully flexible and can be readily transferred to other materials for handling purposes or for new materials integration schemes. Using in situ synchrotron X-ray scattering, we find that the nanomembranes can bond to other host substrates near room temperature and demonstrate coupling between surface reactivity and electromechanical properties in ferroelectric nanomembrane systems. The synthesis technique described here represents a significant advancement in materials integration and provides a new platform for the development of flexible oxide electronics.

We report thermoelectric measurements on a silicon nanoribbon in which an integrated gate provides strong carrier confinement and enables tunability of the carrier density over a wide range. We find a significantly enhanced thermoelectric power factor that can be understood by considering its behavior as a function of carrier density. We identify the underlying mechanisms for the power factor in the nanoribbon, which include quantum confinement, low scattering due to the absence of dopants, and, at low temperatures, a significant phonon-drag contribution. The measurements set a target for what may be achievable in ultrathin nanowires.