Herein, we report the synthesis and photoelectrochemical characterizations of n-type Fe–V-oxide semiconductors thin film via drop cast method in different proportions onto indium tin oxide coated glass followed by annealing in air at 500 °C for 3 h.

We propose a simple way to increase incident photon-to-current conversion efficiency (IPCE, Y) for electrodeposited p-type Cu 2 O films through addition of Eu(III) to the electrodeposition bath. This is the first reported enhancement of photocurrent for Cu 2 O modified with a rare-earth element. Our study is based on hypothesis that a large ionic radius of Eu(III) promotes its precipitation in form of inclusions of another phase, which act as getter centers leading to purification of host material from detrimental impurities and, correspondingly, to increase in lifetime of non-equilibrium charge carriers. SEM, EDX and XRD analyses indicate that addition of Eu (III) results in some increase of Cu 2 O crystallite size and growth of a secondary Eu containing phase without changing the Cu 2 O lattice parameters. Electrochemical impedance spectroscopy indicates invariance of acceptor concentration and flat band potential for Eu modified films. Remarkable increase of charge carriers' lifetime,

Bi-modified Cu2O possesses a superior photocatalytic water reduction due to its surface morphology, smaller crystallinity, lower charge transfer resistance, and fewer defect sites.

In this paper, graphite‐like carbon nitride‐indium vanadate (g‐C3N4/InVO4) composites have been synthesized via a mixing‐calcination method. Physico‐chemical and photocatalytic experiments suggested that the optimized g‐C3N4/InVO4 composite demonstrates highest photo‐activity in degrading Rhodamine B and para‐nitrophenol as target pollutants. The electrochemical impedance spectroscopic (Mott‐Schottky) analysis confirms n‐type semiconductivity for these materials whereas the composite material exhibited highest 13 μA/cm2 photocurrent under periodic UV‐Visible irradiation for water oxidation. The relative band positions indicate inter‐band interactions between heterojunctions of g‐C3N4 and InVO4 facilitating the separation and migration of photogenerated electron‐hole pairs and a stable performance was reported.