P-AlGaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons: (i) enhanced hole concentration and hole carrier transport efficiency in AlGaN/GaN superlattices, and (ii) enhanced blocking of electron overflow between multiple quantum-wells and AlGaN/GaN superlattices.
Dual-wavelength light-emitting diodes (DW-LEDs) with dip-shaped quantum wells have been studied by numerical simulation. The emission spectra, light output power, carrier concentration in the quantum wells and internal quantum efficiency are investigated. The simulation results indicate that the DW-LEDs with dip-shaped quantum wells perform better than conventional LEDs with rectangular quantum wells in terms of light output power, leakage current and efficiency droop. These improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the dip-shaped quantum wells.
dip-shaped quantum wells, numerical simulation, dual-wavelength LED
Citation:Xu Y Q, Fan G H, Zhou D T, et al. Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells.
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