In this paper the hole mobility in the amorphous small molecule material N,NЈ-bis͑1-naphthyl͒-N,NЈ-diphenyl-1 , 1Ј-biphenyl-4 , 4Ј-diamine ͑␣-NPD͒, which is frequently used in organic light-emitting diodes, is studied. From an analysis of the temperature and layer thickness dependence of the steady-state current density in sandwich-type ␣-NPD-based hole-only devices, it is found that a conventional mobility model assuming a Poole-Frenkel type field dependence and neglecting the carrier density dependence is not appropriate. Consistent descriptions with equal quality are obtained within the framework of two forms of the Gaussian disorder model ͑GDM and CDM͒, within which the presence of energetic disorder is described by a Gaussian density of states and within which spatial correlations between the site energies are absent or are included, respectively. Both models contain a carrier density dependence of the mobility. Based on a comparison of the site densities as obtained from both models with the molecular density, we argue that the analysis provides evidence for the presence of correlated disorder.

van Mensfoort, S.L.M.; Shabro, V.; Vulto, S.I.E.; Janssen, R.A.J.; Coehoorn, R.