The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspects in condensed matter physics and has been a controversial topic for a long time. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of occupied electronic states. In a magnetic Weyl semimetal with broken time-reversal symmetry, there are significant contributions to Berry curvature around Weyl nodes, possibly leading to a large intrinsic AHE. Here, we report the quite large AHE in the half-metallic ferromagnet Co3Sn2S2 single crystal. By systematically mapping out the electronic structure of Co3Sn2S2 both theoretically and experimentally, we demonstrate that the intrinsic AHE from the Weyl fermions near the Fermi energy is dominating. The intrinsic anomalous Hall conductivity depends linearly on the magnetization and can be reproduced by theoretical simulation, in which the Weyl nodes monotonically move with the constrained magnetic moment on Co atom.

Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable candidates for MTIs. Here, we grow two-dimensional single crystals of Mn(SbxBi(1-x))2Te4 bulk and exfoliate them into thin flakes in order to search for intrinsic MTIs. We perform angle-resolved photoemission spectroscopy, low-temperature transport measurements, and first-principles calculations to investigate the band structure, transport properties, and magnetism of this family of materials, as well as the evolution of their topological properties. We find that there exists an optimized MTI zone in the Mn(SbxBi(1-x))2Te4 phase diagram, which could possibly host a high-temperature QAH phase, offering a promising avenue for new device applications.

Layered kagome-lattice 3 d transition metals are emerging as an exciting platform to explore the frustrated lattice geometry and quantum topology. However, the typical kagome electronic bands, characterized by sets of the Dirac-like band capped by a phase-destructive flat band, have not been clearly observed, and their orbital physics are even less well investigated. Here, we present close-to-textbook kagome bands with orbital differentiation physics in CoSn, which can be well described by a minimal tight-binding model with single-orbital hopping in Co kagome lattice. The capping flat bands with bandwidth less than 0.2 eV run through the whole Brillouin zone, especially the bandwidth of the flat band of out-of-plane orbitals is less than 0.02 eV along Γ− M . The energy gap induced by spin-orbit interaction at the Dirac cone of out-of-plane orbitals is much smaller than that of in-plane orbitals, suggesting orbital-selective character of the Dirac fermions.

The nature of the parent compound of a high-temperature superconductor (HTS) often plays a pivotal role in determining its superconductivity. The parent compounds of the cuprate HTSs are antiferromagnetically ordered Mott insulators, while those of the iron-pnictide HTSs are metals with spin-density-wave order. Here we report the electronic identification of two insulating parental phases and one semiconducting parental phase of the newly discovered family of K x Fe 2Ày Se 2 superconductors. The two insulating phases exhibit Mott-insulator-like signatures, and one of the insulating phases is even present in the superconducting and semiconducting K x Fe 2Ày Se 2 compounds. However, it is mesoscopically phaseseparated from the superconducting or semiconducting phase. Moreover, we find that both the superconducting and semiconducting phases are free of the magnetic and vacancy orders present in the insulating phases, and that the electronic structure of the superconducting phase could be developed by doping the semiconducting phase with electrons. The rich electronic properties discovered in these parental phases of the K x Fe 2Ày Se 2 superconductors provide the foundation for studying the anomalous behavior in this new class of iron-based superconductors.

SnSe is a promising thermoelectric material with record-breaking figure of merit. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole-doping mechanism in SnSe is still absent. Here we report the highly anisotropic electronic structure of SnSe investigated by angle-resolved photoemission spectroscopy, in which a unique pudding-mould-shaped valence band with quasi-linear energy dispersion is revealed. We prove that p-type doping in SnSe is extrinsically controlled by local phase segregation of SnSe2 microdomains via interfacial charge transferring. The multivalley nature of the pudding-mould band is manifested in quantum transport by crystallographic axis-dependent weak localisation and exotic non-saturating negative magnetoresistance. Strikingly, quantum oscillations also reveal 3D Fermi surface with unusual interlayer coupling strength in p-SnSe, in which individual monolayers are interwoven by peculiar point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family.

We report high-resolution angle-resolved photoemission studies of epitaxial thin films of the correlated 4d transition metal oxide ferromagnet SrRuO3. The Fermi surface in the ferromagnetic state consists of well-defined Landau quasiparticles, exhibiting strong coupling to low-energy bosonic modes which contributes to the large effective masses observed by transport and thermodynamic measurements. Upon warming the material through its Curie temperature, we observe a substantial decrease in quasiparticle coherence, but negligible changes in the ferromagnetic exchange splitting, suggesting that local moments play an important role in the ferromagnetism in SrRuO3.

Controlling the electronic properties of interfaces has enormous scientific and technological implications and has been recently extended from semiconductors to complex oxides that host emergent ground states not present in the parent materials. These oxide interfaces present a fundamentally new opportunity where, instead of conventional bandgap engineering, the electronic and magnetic properties can be optimized by engineering quantum many-body interactions. We use an integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy system to synthesize and investigate the electronic structure of superlattices of the Mott insulator LaMnO(3) and the band insulator SrMnO(3). By digitally varying the separation between interfaces in (LaMnO(3))(2n)/(SrMnO(3))(n) superlattices with atomic-layer precision, we demonstrate that quantum many-body interactions are enhanced, driving the electronic states from a ferromagnetic polaronic metal to a pseudogapped insulating ground state. This work demonstrates how many-body interactions can be engineered at correlated oxide interfaces, an important prerequisite to exploiting such effects in novel electronics.

In the present photoemission study of a cuprate superconductor Bi1.74Pb0.38Sr1.88CuO6+delta, we discovered a large scale dispersion of the lowest band, which unexpectedly follows the band structure calculation very well. Similar behavior observed in blue bronze and the Mott insulator Ca2CuO2Cl2 suggests that the origin of hopping-dominated dispersion in an overdoped cuprate might be quite complicated. A giant kink in the dispersion is observed, and the complete self-energy containing all interaction information is extracted for a doped cuprate. These results recovered significant missing pieces in our current understanding of the electronic structure of cuprates.