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Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance nonvolatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are formingfree and with greater than 1x10 5 cycle endurance.

This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide (TaO ) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately rad(Si)/s to rad(Si)/s and for pulse widths ranging from 50 ns to s. The cumulative dose in these tests did not appear to impact the observed dose rate response. Static dose rate upset tests were also performed at a dose rate of rad(Si)/s. This is the first dose rate study on any type of memristive memory technology. In addition to assessing the tolerance of TaO memristors to high dose rate ionizing radiation, we also evaluated their susceptibility to TID. The data indicate that it is possible for the devices to switch from a high resistance off-state to a low resistance on-state in both dose rate and TID environments. The observed radiation-induced switching is dependent on the irradiation conditions and bias configuration. Furthermore, the dose rate or ionizing dose level at which a device switches resistance states varies from device to device; the enhanced susceptibility observed in some devices is still under investigation. Numerical simulations are used to qualitatively capture the observed transient radiation response and provide insight into the physics of the induced current/voltages. Index Terms-Dose rate, memristors, pulsed ionizing radiation, tantalum oxide ( TaO ) , total ionizing dose (TID), transient radiation effects. 0018-9499

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