The symmetry of Cooper pairs is central to constructing a superconducting state. The demonstration of a d(x²-y²)-wave order parameter with nodes represented a breakthrough for high critical temperature superconductors (HTSs). However, despite this fundamental discovery, the origin of superconductivity remains elusive, raising the question of whether something is missing from the global picture. Deviations from d(x²-y²)-wave symmetry, such as an imaginary admixture d(x²-y²)+ is (or id(xy)), predict a ground state with unconventional properties exhibiting a full superconducting gap and time reversal symmetry breaking. The existence of such a state, until now highly controversial, can be proved by highly sensitive measurements of the excitation spectrum. Here, we present a spectroscopic technique based on an HTS nanoscale device that allows an unprecedented energy resolution thanks to Coulomb blockade effects, a regime practically inaccessible in these materials previously. We find that the energy required to add an extra electron depends on the parity (odd/even) of the excess electrons on the island and increases with magnetic field. This is inconsistent with a pure d(x²-y²)-wave symmetry and demonstrates a complex order parameter component that needs to be incorporated into any theoretical model of HTS.

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns.

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In-phase TMF crack growth testing with different lengths of the hold time at the maximum temperature of 550C has been conducted on Inconel 718 specimens. Focus has been on establishing a method for TMF crack growth testing and investigating the effect of high temperature hold times on the TMF crack growth of the material. The tests are compared to isothermal crack propagation tests and show good correlation. It is concluded that the controlling effect of the crack growth is an embrittlement of the material. This embrittlement is related to the concept of a damaged zone active in front of the crack tip. The size of this damaged zone will control the crack propagation rate and therefore it does not matter if the load is cycled under isothermal or TMF conditions.

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Modelling of high temperature fatigue crack growth in Inconel 718 under the interaction of fast cyclic loading and hold times at maximum load has been conducted. A model, based on the concept of a damaged zone in front of the crack tip has been applied for three different temperatures, 550, 600 and 650• C, with good agreement for both calibration and validation tests. A statistical evaluation of 22 tests in total was also conducted, which shows that the developed model gives a reasonable scatter factor at a probability of failure of 0.1 %.

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This paper derives the theory and presents measurements of a new power amplifier based on the Doherty power amplifier topology. It is theoretically shown that the proposed amplifier can simultaneously provide high efficiency at both full output power and at output power back-off, over a much improved bandwidth compared to the conventional Doherty power amplifier. It is also shown that the proposed amplifier allows reconfiguration of the efficiency in power back-off without the need of tunable elements.A demonstrator circuit with individually controlled main and auxiliary amplifier input signals is designed to validate the theoretical findings. Measurements show state-of-the-art efficiency bandwidth with more than 49% drain efficiency at both full output power (42 dBm) and at 6 dB output power back-off (36 dBm) over a 1.5-2.4 GHz frequency range. The measurements also demonstrate that the efficiency in back-off can be conveniently reconfigured. The measurements thereby validate the presented theory and demonstrate the potential of the proposed amplifier for use in future wireless transmitter applications.Index Terms-Broadband amplifiers, Doherty, gallium nitride, GaN, high efficiency, power amplifiers, wideband.