The transient photoluminescence of CH3NH3PbI3/PC61BM heterojunctions is simulated numerically allowing the extraction of the interfacial recombination velocity of experimentally measured samples.

Scanning tunnelling microscopy measurements reveal grain dependent changes in surface state density and workfunctions on polycrystalline CH3NH3PbI3 absorbers.

The enhancement of the fill factor in the current generation of perovskite solar cells is the key for further efficiency improvement. Thus, methods to quantify the fill factor losses are urgently needed. Two methods are presented to quantify losses due to the finite resistance of the semiconducting layers of the solar cell as well as its contacts. The first method is based on the comparison between the voltage in the dark and under illumination analyzed at equal recombination current density and results in a voltage‐dependent series resistance. Furthermore, the method reveals the existence of a strong photoshunt under illumination. The second method is based on measuring the photoluminescence of perovskite solar cells as a function of applied voltage. Thereby, the recombination current is determined as a function of voltage from short circuit to open circuit, and the presence of the photoshunt is explained with a high resistance of the electron and/or hole transport layers combined with field screening in the absorber.