Ever since its discovery, graphene has been revolutionizing the field of materials science and engineering, showing promise towards use in a variety of applications. Examples of some of the many remarkable properties of graphene include allowance of the electric field-effect at room temperature [1], high thermal mobility and electronic conductivity [2, 3], and unprecedented high-strength and quantum effects (e.g. the quantum Hall effect and relativistic behavior of carriers) [4]. The discovery of graphene has expanded the area of quantum materials, leading to the discovery of additional 2D materials-such as dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), silicene, germanene, black phosphorene [5, 6]-with similarly-intriguing properties.Despite the inherently-remarkable properties associated with these materials, engineering intervention is still sometimes necessary to achieve certain, otherwise-unattainable properties. For instance, device-driven applications necessitate modification of a candidate material's electronic structure. Probabilistic factors hinder the ability to control these properties, although contemporary engineering techniques-such as doping and strain engineering [7, 8]-have curbed the extent of these probabilistic factors, allowing for the tuning of material properties on demand.Similarly, nanodevices with multiple layers of 2D materials have been developed [9][10][11] in order to expand the envelope of attainable properties. In these devices, the layers weakly interact by van der Waals forces and the atoms form Moiré patterns when subjected to rotations. Interestingly, recent studies have shown that the
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