We report on measurements of the switching current distributions on two-dimensional superconducting NbTiN strips that are 5 nm thick and 80 nm wide. We observe that the width of the switching current distributions has a non-monotonous temperature dependence, where it is constant at the lowest temperatures up to about 1.5 K, after which it increases with temperature until 2.2 K. Above 2.5 K any increase in temperature decreases the distribution width which at 4.0 K is smaller than half the width observed at 0.3 K. By using a careful analysis of the higher order moments of the switching distribution, we show that this temperature dependence is caused by switching due to multiple fluctuations. We also find that the onset of switching by multiple events causes the current dependence of the switching rate to develop a characteristic deviation from a pure exponential increase, that becomes more pronounced at higher temperatures, due to the inclusion of higher order terms.

Detection of single infrared photons in superconducting microstrips of 4 nm thick disordered Nb0.15Re0.85 has been investigated. Microstrips with a critical temperature of 5.15 K and widths from 1.0 to 2.5  μm have been fabricated by optical lithography. We demonstrate single photon detection sensitivity at 1.5  μm wavelength at a temperature of 1.79 K. By investigating the detection process at this temperature, we find that the current bias threshold is at 21% of the depairing current. This threshold is similar to what should be observed in typical amorphous superconductors, which confirms that ultrathin disordered Nb0.15Re0.85 is an interesting material for superconducting microstrip single photon detectors that operate above 1 K.

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Josephson junctions (JJs) containing ferromagnetic (F) materials are being considered for applications as cryogenic random access memories (RAM). In this work, we report on the fabrication and characterization of tunnel JJs, based on Nb technology with a strong ferromagnetic interlayer Ni80Fe20 alloy (Permalloy), which is suitable for the realization of devices with reduced area and guarantees relative low saturation and coercive fields in the use of JJs as RAM elements. We have successfully realized Josephson memory elements that work well down to 7 μm2 preserving high values of the characteristic voltage. We have also investigated the role of the F layer thickness, and by measuring the critical current dependence on the external applied magnetic field, we have optimized our devices as memory elements using thin ferromagnetic layers with thickness down to 3 nm. We have experimentally proved their functioning as memory elements by applying magnetic field pulses in opposite directions that can change the F layer magnetization.