The indium nitrides Sr6In4(In(0.32)Li(0.92))N(2.49) and Ba6In(4.78)N(2.72) have been synthesized from an excess of molten sodium. They crystallize in a stuffed variant of the eta-carbide structure type in the cubic space group Fdm with Z = 8. The lattice parameters are a = 14.3752(4) and 15.216(1) A, with cell volumes 2970.6(2) and 3523.3(6) A3, respectively. In both compounds there are vacancies on some of the indium and nitrogen sites and, in the case of Sr6In4(In(0.32)Li(0.92))N(2.49), mixed lithium-indium occupancy of one metal site. It is demonstrated that the partial and mixed occupancies act to carefully tune to electron count to almost fulfill the bonding requirements of the stellar quadrangular subnets of both compounds. Four probe resistivity measurements performed upon a pellet of Sr6In4(In(0.32)Li(0.92))N(2.49) show it to have a room-temperature resistivity of 6.3 mOmega.cm with a weak temperature dependence.
The Indium Subnitrides M 6 In 4 (In x Li y )N 3-z (M: Sr and Ba). -The new compounds Sr6In4(In0.32Li0.92)N2.49 (I) and Ba6In4.78N2.72 (II) are synthesized in molten Na. As revealed by powder X-ray and neutron diffraction they crystallize in a stuffed variant of the η-carbide structure type in the cubic space group Fd3m with Z = 8. Their structures can be visualized in terms of interpenetrating nets, one ionic and the other covalent in bonding character. In both compounds there are vacancies on some of the In and N sites. The atomic disorder present in (I) is reflected in its measured resistivity. The compounds are further characterized by EH band structure calculations. -(BAILEY, M. S.; SHEN, D. Y.; MCGUIRE, M. A.; FREDRICKSON, D. C.; TOBY, B. H.; DISALVO*, F. J.; YAMANE, H.; SASAKI, S.; SHIMADA, M.; Inorg.
We analyze the formation kinetics of the boron–oxygen defect in compensated n-type upgraded metallurgical-grade (UMG) silicon solar cells. Through time-resolved open-circuit voltage measurements, we explore the influence of temperature, forward bias, and light intensity on the formation kinetics of the defect. Our results confirm that the boron–oxygen defect forms more slowly in compensated n-type silicon than in p-type silicon. We present evidence which suggests that the slower kinetics in n-type silicon may be due to a lower frequency factor for defect formation.
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